Homogeneously fine-grained vapor-deposited material in bulk form

ABSTRACT

In one form of the invention a substrate in the condition and form of a hot titanium strip is advanced over a refractory mask in which are slots for admitting to a face of the strip the vapor of a crystalline material. Crucibles are arranged in a sequence beneath the mask to supply the vapor through the slots for deposition in very thin layers on the substrate. In another batch form of the invention the substrate comprises a fixed substrate sheet located above a slotted rotating shutter. Below the shutter is a crucible containing the material to be vaporized and deposited in the very thin layers upon the substrate. In both forms, the apparatus above described is located in a chamber which may be evacuated or contain a desired atmosphere. In each case the substrate is maintained at a temperature such that, as successive very thin layers of the vaporant are laid down, each condenses before the next is applied so that the latter will nucleate and condense without continuous columnar grain growth normal to the plane of the multiply material on the substrate. A number of layers are laid down until the material deposited on the substrate reaches a bulk thickness in the range of about 1 to 10 mils. The resulting homogeneously grained and layered composite is then stripped from the substrate.

SHEET 1nF 2 [72] 1nventorS Char1es D. Tur

NorWood Harris L. Marcus, Norh Ameboro, bo1h o1 MaSs. [Z1] App1. No. o89,944 [22] FHed Dec. 12,1967 [45] Patented oc1. 26, 1971 [73] ASSignee TeXas 1nstrumen1S 1ncorpora1ed Da"s, Tox.

[54] HOMOGENEOUSLY FINE-GRAINED VAPoR- DEPoSITED MATERIAL IN BULK FORM Z C11ms, 5 Dfawing gS.

[521 U.s. c1 u 29/194, Z9/1835, 117/107, 117/71 R, 117/106 R,

[S1] 1L C1 u n B3Zb 15/00 [50] M o1Seorch 117/106,

Pmory Exommer-Ra1ph S- Kenda.H 1or"8y$ GeraId B. EpStein, Haro]d LeVine, Edward J. connors, Jr-, James P. McAndrews and John A. Haug STACT: In one form of the 1nvention a Substrate in the condi11on and form of a hot [itanium strip iS advanced over a refractory mask in Which are s1()ts for admndng to a face of the strip the vapoT of a cryStalHne maeria1. crucib1es are arranged in a Sequence beneath the 1ask to Supp1y the Vapo1 through the s1ots for deposition in veTy thin 1ayerS on the sub Strate4 1n another batch form of the invention the substrate com priSeS a 11xed subStrate sheet 1ocated above a S1oned rotating Shuter Be1ow the shutter iS a crucib1e containing the materia1 to be vaporized and deposited in the very thin IayerS upon the subStrato.

1n both forms, the apparatus above described is 1ocaed in a chamber which may be eVacuated or contain a desired atmos here. 1n each case the substrate is maintained at a temperature such that, aS Successive very thin 1ayerS of the vaporan are 1aid down, each condenSeS before the neXt is ap ped so 1hat the 1attor wiH nuc1eate and condense without connnuous co1umnar grain growth norma1 to the pane of Ihe mu1tip1y materia1 on the subsra1e. A number of1ayers are 1aid down untH the materia1 de osited on the subS1rate reacheS a bulk thicknesS in the range ofabout 1 to 10 mi1s. The reSu1ting homogenoous1y grained and 1ayered composic is then Str1pped from thc Substrate. 

2. The method of forming a bulk mass in self-supporting sheet form of fine-grained metallic material having a thickness in the range of from one to ten mils comprising vaporizing the material, intermittently depositing successive layers of the vapor on a given area of a substrate and to one another in a timed sequence such that each layer is of thickness in the range of one-quarter to 5 microns, the time interval between successive depositions permitting condensation of each layer before the next one is applied thereto to interrupt columnar nucleation and to effect grain renucleation at the interface between adjacent layers. 